Trade Mark Journal No.2026/039 25 September 2026

WO0000001937516 (9)

Office of origin: United States of America

Date of International Registration:6 July 2026
Date of designation in the UK: 6 July 2026
Image for mark 1937516 ISOFLUX

International priority date claimed: 2 July 2026 (United States of America) (99919709)
Class 9
Single crystal silicon carbide semiconductor wafers, boules, ingots, and chips; semiconductor substrates and semiconductor wafers; single crystal silicon carbide substrates for the epitaxial deposition of electronic and photonic material structures; semiconductor wafers and substrates for use in the manufacture of power semiconductor devices, radio frequency devices, electronic devices, photonic devices, and optoelectronic devices; semiconductor substrates for thermal management of integrated circuits, namely, silicon carbide substrates and heat-spreading wafers for dissipating heat in integrated circuits.

Silicon Carbide LLC

Representative: Christopher M. Dolan Barnes & Thornburg LLP, One North Wacker Drive, Suite 4400, Chicago IL 60606, UNITED STATES OF AMERICA